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| Green Product STU411D Ver 1.0 S a mHop Microelectronics C orp. Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) VDSS 40V PRODUCT SUMMARY (P-Channel) VDSS -40V ID 15A RDS(ON) (m) Max 32 @ VGS=10V ID -12A RDS(ON) (m) Max 48 @ VGS=-10V 68 @ VGS=-4.5V 42 @ VGS=4.5V D1/D2 G1 D1 D2 G2 S1 G1 S2 G2 TO-252-4L S1 N-ch S2 P -ch ABSOLUTE MAXIMUM RATINGS ( T C=25 C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a TC=25C TC=70C N-Channel P-Channel 40 -40 20 20 15 -12 12 43 8 -10 -36 15 11 6.7 -55 to 150 Units V V A A A mJ W W C Sigle Pulse Avalanche Energy Maximum Power Dissipation a TC=25C TC=70C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS a R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient a 12 60 C/W C/W Details are subject to change without notice. Sep,04,2008 1 www.samhop.com.tw STU411D Ver 1.0 N-Channel ELECTRICAL CHARACTERISTICS ( TC=25 C unless otherwise noted ) 4 Symbol Parameter Conditions VGS=0V , ID=250uA VDS=32V , VGS=0V Min 40 Typ Max Units V uA uA OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current VGS= 20V , VDS=0V 1 10 ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=250uA VGS=10V , ID=15A VGS=4.5V , ID=13A VDS=5V , ID=15A 1.25 1.5 25 32 17 3 32 42 V m ohm m ohm S DYNAMIC CHARACTERISTICS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDS=20V,VGS=0V f=1.0MHz 623 95 56 pF pF pF ns ns ns ns nC nC nC nC 2.2 VDD=20V ID=1A VGS=10V RGEN=3.3 ohm VDS=20V,ID=15A,VGS=10V VDS=20V,ID=15A,VGS=4.5V VDS=20V,ID=15A, VGS=10V 10.5 10.6 39 9.6 9.5 4.5 1.6 2.3 DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b A V VGS=0V,IS=2.2A 0.78 1.2 Sep,04,2008 2 www.samhop.com.tw STU411D Ver 1.0 P-Channel ELECTRICAL CHARACTERISTICS ( TC=25 C unless otherwise noted ) 4 Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS IGSS Gate-Body Leakage Current VGS=0V , ID=-250uA VDS=-32V , VGS=0V -40 -1 10 V uA uA VGS= 20V , VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance c VDS=VGS , ID=-250uA VGS=-10V , ID=-12A VGS=-4.5V , ID=-10A VDS=-5V , ID=-12A -1.25 -1.6 38 52 9 -3 48 68 V m ohm m ohm S DYNAMIC CHARACTERISTICS CISS COSS CRSS Input Capacitance Output Capacitance Reverse Transfer Capacitance c VDS=-20V,VGS=0V f=1.0MHz 895 138 67 pF pF pF SWITCHING CHARACTERISTICS tD(ON) Turn-On Delay Time tr Rise Time tD(OFF) Turn-Off Delay Time tf Fall Time Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=-20V ID=-1A VGS=-10V RGEN=3 ohm VDS=-20V,ID=-12A,VGS=-10V VDS=-20V,ID=-12A,VGS=-4.5V VDS=-20V,ID=-12A, VGS=-10V 14 14 54 10 14.5 7 2.1 3.4 ns ns ns ns nC nC nC nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode Forward Current IS VSD Diode Forward Voltage b VGS=0V,IS=-2.0A -0.77 -2.0 -1.2 A V Notes _ a.Surface Mounted on FR4 Board,t < 10sec. _ _ b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%. c.Guaranteed by design, not subject to production testing. d.Starting TJ=25C,L=0.5mH,VDD = 20V,VGS=10V.(See Figure13) Sep,04,2008 3 www.samhop.com.tw STU411D Ver 1.0 N-Channel 40 V G S =10V V G S =4.5V V G S =4V 20 ID, Drain Current(A) V G S =3.5V 24 ID, Drain Current(A) 32 16 12 T j =125 C -55 C 8 4 0 25 C 16 V G S =3V 8 0 V G S =2.5V 0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4.0 4.8 VDS, Drain-to-Source Voltage(V) VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 72 Figure 2. Transfer Characteristics 1.5 RDS(on), On-Resistance Normalized 60 1.4 1.3 1.2 1.1 1.0 0.0 V G S =4.5V ID=13A RDS(on)(m ) 48 V G S =4.5V 36 24 V G S =10V 12 0 V G S =10V ID=15A 1 8 16 24 32 40 0 25 50 75 100 125 150 T j ( C ) ID, Drain Current(A) Tj, Junction Temperature( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.2 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 Vth, Normalized Gate-Source Threshold Voltage 1.1 1.0 0.9 0.8 0.7 0.6 0.5 -50 -25 0 25 50 75 V DS =V G S ID=250uA ID=250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 100 125 150 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature 4 Figure 6. Breakdown Voltage Variation with Temperature Sep,04,2008 www.samhop.com.tw STU411D Ver 1.0 84 70 20.0 Is, Source-drain current(A) ID=15A 10.0 RDS(on)(m ) 56 125 C 42 28 75 C 14 0 25 C 5.0 125 C 75 C 25 C 0 2 4 6 8 10 1.0 0 0.4 0.8 1.2 1.6 2.0 VGS, Gate-to-Source Voltage(V) VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 1200 Figure 8. Body Diode Forward Voltage Variation with Source Current 10 VGS, Gate to Source Voltage(V) 1000 C, Capacitance(pF) 8 6 4 2 0 0 VDS=20V ID=15A 800 Ciss 600 400 Coss 200 Crss 0 0 5 10 15 20 25 30 2 4 6 8 10 12 14 16 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 1000 100 Li m it 10 1m 10 m DC s s 0u s 10 ID, Drain Current(A) Switching Time(ns) 100 TD(off) 10 RD S( ) ON us Tr Tf 10 TD(on) 1 1 1 VDS=20V,ID=1A VGS=10V 3 10 60 100 0.1 0.1 V G S =10V S ingle P ulse T c=25 C 1 10 100 Rg, Gate Resistance() VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Sep,04,2008 5 www.samhop.com.tw STU411D Ver 1.0 15V V ( BR )D S S tp VDS L D R IVE R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit F igure 13a. Unclamped Inductive Waveforms F igure 13b. 2 1 D=0.5 Normalized Transient Thermal Resistance 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E P DM t1 t2 1. 2. 3. 4. R J A (t)=r (t) * R J A R J A=S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Sep,04,2008 6 www.samhop.com.tw STU411D Ver 1.0 P-Channel 20 VGS=-10V VGS=-4.5V 15 -ID, Drain Current(A) -ID, Drain Current(A) 16 VGS=-3.5V 12 12 9 Tj=125 C 6 25 C 3 0 -55 C 8 4 VGS=-8V VGS=-3V 0 0 0.5 1 1.5 2 2.5 3 0 0.8 1.6 2.4 3.2 4.0 4.8 -VDS, Drain-to-Source Voltage(V) -VGS, Gate-to-Source Voltage(V) Figure 1. Output Characteristics 120 100 Figure 2. Transfer Characteristics 1.5 1.4 1.3 1.2 1.1 1.0 0.0 VGS=-4.5V ID=-10A VGS=-10V ID=-12A RDS(on)(m ) 80 60 40 VGS=-10V 20 0 VGS=-4.5V 1 4 8 12 16 20 RDS(on), On-Resistance Normalized 0 25 50 75 100 125 150 T j ( C ) -ID, Drain Current(A) Tj, Junction Temperature( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 Figure 4. On-Resistance Variation with Drain Current and Temperature BVDSS, Normalized Drain-Source Breakdown Voltage 1.15 Vth, Normalized Gate-Source Threshold Voltage VDS=VGS ID=-250uA ID=-250uA 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature 7 Figure 6. Breakdown Voltage Variation with Temperature Sep,04,2008 www.samhop.com.tw STU411D Ver 1.0 120 100 20.0 -Is, Source-drain current(A) ID=-12A 10.0 25 C RDS(on)(m ) 80 125 C 60 40 20 0 75 C 25 C 125 C 75 C 0 2 4 6 8 10 1.0 0.4 0.6 0.8 1.0 1.2 1.4 -VGS, Gate-to-Source Voltage(V) -VSD, Body Diode Forward Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage 1200 1000 Ciss Figure 8. Body Diode Forward Voltage Variation with Source Current 10 -VGS, Gate to Source Voltage(V) C, Capacitance(pF) 8 VDS=-20V ID=-12A 800 600 400 Coss 200 Crss 0 0 5 10 15 20 25 30 6 4 2 0 0 2 4 6 8 10 12 14 16 -VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure 10. Gate Charge 1000 100 it 10 1m 10 m DC s s 0u s -ID, Drain Current(A) Switching Time(ns) 100 TD(off ) 10 R DS ( ) ON Li m Tr TD(on) 10 Tf 1 1 1 VDS=-20V,ID=-1A VGS=-10V 0.1 6 10 60 100 0.1 V G S =-10V S ingle P ulse T c=25 C 1 10 100 Rg, Gate Resistance() -VDS, Drain-Source Voltage(V) Figure 11. switching characteristics Figure 12. Maximum Safe Operating Area Sep,04,2008 8 www.samhop.com.tw STU411D Ver 1.0 15V V ( BR )D S S tp VDS L D R IVE R RG 20V D .U .T IA S tp + - VD D A 0.0 1 IAS Unclamped Inductive Test Circuit F igure 13a. Unclamped Inductive Waveforms F igure 13b. 2 1 D=0.5 Normalized Transient Thermal Resistance 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E P DM t1 t2 1. 2. 3. 4. R J A (t)=r (t) * R J A R J A=S ee Datas heet T J M-T A = P DM* R J A (t) Duty C ycle, D=t1/t2 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration(sec) Figure 14. Normalized Thermal Transient Impedance Curve Sep,04,2008 9 www.samhop.com.tw STU411D Ver 1.0 PACKAGE OUTLINE DIMENSIONS E b2 L3 1 D1 E1 D H 1 L4 b1 e b 2 3 4 5 DETAIL "A" A C TO-252-4L L2 L L1 A1 DETAIL "A" INCHES MIN 0.087 0.000 0.017 0.025 0.205 0.018 0.236 0.205 0.252 0.173 0.050 0.370 0.055 0.108 0.020 0.035 0.025 0 7 MAX 0.094 0.005 0.027 0.031 0.215 0.023 0.245 0.217 0.265 0.197 BSC 0.409 0.070 REF. REF. 0.050 0.040 10 REF. SYMBOLS A A1 b b1 b2 C D D1 E E1 e H L L1 L2 L3 L4 1 MILLIMETERS MIN 2.200 0.000 0.440 0.635 5.210 0.450 6.000 5.200 6.400 4.400 1.270 9.400 1.397 2.743 0.508 0.890 0.640 0 7 MAX 2.387 0.127 0.680 0.787 5.460 0.584 6.223 5.515 6.731 5.004 BSC 10.400 1.770 REF. REF. 1.270 1.010 10 REF. Sep,04,2008 10 www.samhop.com.tw STU411D Ver 1.0 TO-252-4L Tape and Reel Data TO-252-4L Carrier Tape K0 T 6 Max B0 4 Max SECTION B-B A0 SECTION A-A B D1 P1 P2 E1 E2 UNIT: PACKAGE TO-252 (16 A0 6.96 0.1 B0 10.49 0.1 K0 2.79 0.1 D0 2 D1 1.5 + 0.1 -0 B A A P0 D0 E FEED DIRECTION E 16.0 0.3 E1 1.75 0.1 E2 7.5 0.15 P0 8.0 0.1 P1 4.0 0.1 P2 2.0 0.15 T 0.3 0.05 TO-252-4L Reel T S V R M N G H W UNIT: TAPE SIZE 16 REEL SIZE 330 M 330 0.5 N 97 1.0 W 17.0 + 1.5 -0 T 2.2 H 13.0 + 0.5 - 0.2 K 10.6 S 2.0 0.5 G R K V Sep,04,2008 11 www.samhop.com.tw |
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